Process for producing silicon semiconductor wafers with low defect density

A process for producing silicon wafers with low defect density, comprising the steps of:

• a) producing a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 by solidifying molten material to form the silicon single crystal and by cooling the silicon single crystal, and having a holding time of the silicon single crystal during cooling in a temperature range of from 850.degree. C. to 1100.degree. C. being less than 80 minutes,
• such that the proportion of small defects is as great as possible and the proportion of large defects is as small as possible;
• b) processing the silicon single crystal to form silicon wafers;
• and
• c) annealing the silicon wafers at a temperature of at least 1000.degree. C. for at least one hour in an atmosphere selected from the group consisting of noble gases, nitrogen and hydrogen,
• such that the small defects are substantially eliminated during said annealing so that the annealed silicon wafers then have only small defect densities.