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US 6,815,352 B1Granted
Silicon focus ring and method for producing the same
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsKazuyoshi Tamura, Makoto Kawai, Keiichi Goto
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsKazuyoshi Tamura, Makoto Kawai, Keiichi Goto
Estimating the term…
There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3 is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.
A silicon focus ring comprising silicon single crystal used as a focus ring in a plasma apparatus, wherein, in order to produce an intrinsic heavy metal gettering effect of the focus ring, a concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and a nitrogen concentration in the silicon focus ring is not less than 5×1013 number/cm3 and not more than 5×1015 number/cm3, the intrinsic gettering effect exceeding a corresponding effect for silicon not doped with interstitial oxygen and nitrogen, and the surface of the silicon focus ring is subjected to etching treatment to remove a mechanical damage layer.
A producing method for a silicon focus ring of a single crystal silicon used for a plasma apparatus, wherein, in order to produce an intrinsic heavy-metal gettering effect of the focus ring, a concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, the single crystal silicon is grown by a Czochralski method with doping nitrogen, a nitrogen concentration in the silicon focus ring is not less than 5×1013 number/cm3 and not more than 5×1015 number/cm3, the single crystal silicon is processed in a circle, and a silicon ring is produced, and the surface of the silicon focus ring is subjected to etching treatment to remove a mechanical damage layer, the intrinsic gettering effect exceeding a corresponding effect for silicon not doped with interstitial oxygen and nitrogen.
Dependencies are inferred from the claim text.