C23C 16/308
Oxynitrides
Official title: {Oxynitrides}
C23C16/308 (Oxynitrides) appears on 512 US grants and 639 published applications in this corpus.
Search patents in C23C- Granted patents
- 512
- Published applications
- 639
- Assignees
- 225
- Inventors
- 1,295
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 6 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 6 |
| 2002 | 8 | 14 |
| 2003 | 13 | 23 |
| 2004 | 19 | 17 |
| 2005 | 14 | 35 |
| 2006 | 9 | 22 |
| 2007 | 15 | 24 |
| 2008 | 17 | 29 |
| 2009 | 13 | 20 |
| 2010 | 23 | 18 |
| 2011 | 13 | 19 |
| 2012 | 11 | 18 |
| 2013 | 15 | 20 |
| 2014 | 17 | 26 |
| 2015 | 19 | 25 |
| 2016 | 20 | 25 |
| 2017 | 29 | 33 |
| 2018 | 20 | 29 |
| 2019 | 13 | 22 |
| 2020 | 31 | 39 |
| 2021 | 16 | 27 |
| 2022 | 27 | 37 |
| 2023 | 24 | 35 |
| 2024 | 21 | 38 |
| 2025 | 29 | 27 |
| 2026 | 20 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing11 Aug 2026US 12,703,911 B2Lam Research Corporation
- Composition and methods using same for carbon doped silicon containing films21 Jul 2026US 12,690,400 B2Versum Materials US, LLC
- Forming mesas on an electrostatic chuck21 Jul 2026US 12,690,419 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium7 Jul 2026US 12,677,612 B2Kokusai Electric Corporation
- Method of forming gallium oxynitride layer1 Oct 2026US 2026/0297744 A1Jusung Engineering Co., Ltd.
- Electron spin containing materials and methods for producing said materials10 Sep 2026US 2026/0265062 A1Archer Materials Limited
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
- Substrate processing method and substrate processing system27 Aug 2026US 2026/0250842 A1Tokyo Electron Limited
- Deposition of metal films6 Aug 2026US 2026/0226621 A1Lam Research Corporation
Most cited
By later US patents
- Precursors for depositing silicon containing films and processes thereof627US 7,122,222 B2Air Products and Chemicals, Inc. · 2006
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Pulsed dual radio frequency CVD process568US 4,837,185 AIntel Corporation · 1989
- Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species552US 8,877,655 B2ASM America, Inc. · 2014
- Method of forming dielectric films, new precursors and their use in semiconductor manufacturing541US 8,668,957 B2L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude · 2014