B81C 2203/0778
Topology for facilitating the monolithic integration not provided for in b81c2203/0764 -
Official title: Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771
B81C2203/0778 (Topology for facilitating the monolithic integration not provided for in b81c2203/0764 -) appears on 35 US grants and 34 published applications in this corpus.
Search patents in B81C- Granted patents
- 35
- Published applications
- 34
- Assignees
- 31
- Inventors
- 90
- Latest grant
- 27 Jun 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 2 | 0 |
| 2001 | 2 | 1 |
| 2002 | 1 | 0 |
| 2003 | 1 | 1 |
| 2004 | 3 | 3 |
| 2005 | 2 | 1 |
| 2006 | 0 | 1 |
| 2007 | 2 | 0 |
| 2008 | 0 | 2 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 2 | 1 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 2 | 5 |
| 2015 | 4 | 4 |
| 2016 | 4 | 3 |
| 2017 | 4 | 6 |
| 2018 | 3 | 1 |
| 2019 | 2 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Nanosheet MEMs sensor device and method of manufacture27 Jun 2023US 11,685,647 B2NXP B. V.
- MEMS device package and method for manufacturing the same12 Nov 2019US 10,472,228 B2Advanced Semiconductor Engineering, Inc.
- Monolithic integration of MEMS and IC devices29 Jan 2019US 10,189,705 B1Globalfoundries Singapore Pte. Ltd.
- Two-port SRAM connection structure25 Dec 2018US 10,163,495 B2Taiwan Semiconductor Manufacturing Company.Ltd
- MEMS device structure with a capping structure10 Apr 2018US 9,938,138 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ultrasonic sensor and manufacturing method thereof24 Apr 2025US 2025/0128288 A1Qisda Corporation
- Nanosheet MEMS Sensor Device and Method of Manufacture1 Sep 2022US 2022/0274828 A1NXP B. V.
- Mems device package and method for manufacturing the same21 Feb 2019US 2019/0055118 A1Advanced Semiconductor Engineering, Inc.
- Two-Port SRAM Connection Structure1 Mar 2018US 2018/0061487 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Vertical system integration16 Nov 2017US 2017/0330876 A1
Most cited
By later US patents
- Microfabricated structures with electrical isolation and interconnections85US 6,291,875 B1Analog Devices IMI, Inc. · 2001
- Microfabricated high aspect ratio device with an electrical isolation trench83US 6,121,552 AThe Regents of the University of Caliofornia · 2000
- Plasma etch techniques for fabricating silicon structures from a substrate73US 6,399,516 B1Massachusetts Institute of Technology · 2002
- Method of fabricating a microfabricated high aspect ratio device with electrical isolation69US 6,960,488 B2The Regents of the University of California · 2005
- Monolithic fully-integrated vacuum sealed BiCMOS pressure sensor57US 6,713,828 B1Delphi Technologies, Inc. · 2004