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US 9,938,138 B2Granted
MEMS device structure with a capping structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Wen Cheng, Chia-Hua Chu
Life of this patent
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Abstract
An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.
Claims20
A method comprising:
- forming a first material layer over a substrate, wherein the material layer defines a first cavity;
- forming a second material layer in the first cavity;
- forming a membrane layer over the first material layer and the second material layer;
- forming a via extending through the membrane layer;
- removing the second material layer through the via;
- bonding a capping substrate to the membrane layer, the capping substrate including a dielectric layer defining a second cavity, the second cavity in communication with the first cavity through the via;
- and
- after bonding the capping substrate to the membrane layer, removing a portion of the capping substrate.
5 more elements
A method comprising:
- forming a first metal layer over a substrate;
- forming an interlayer dielectric layer over the first metal layer, wherein the interlayer dielectric layer includes a first cavity;
- forming a first dielectric layer over the first metal layer within the first cavity;
- forming a sacrificial layer within the first cavity;
- forming a second metal layer over the sacrificial layer;
- forming a conductive via feature within the interlayer dielectric layer to electrically couple the first metal layer to the second metal layer;
- forming a membrane layer over the sacrificial layer;
- forming a via that extends completely through the membrane layer;
- removing the sacrificial layer through the via;
- and
- forming a capping structure over the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through the via.
8 more elements
A method comprising:
- forming a first metal layer over a substrate;
- forming an interlayer dielectric layer over the first metal layer, wherein the interlayer dielectric layer includes a first cavity;
- forming a first dielectric layer over the first metal layer within the first cavity;
- forming a sacrificial layer within the first cavity;
- forming a second metal layer over the sacrificial layer;
- forming a membrane layer over the sacrificial layer;
- forming a via that extends through the membrane layer;
- removing the sacrificial layer through the via;
- bonding a dielectric layer on a surface of a semiconductor substrate to the membrane layer, the dielectric layer defining a second cavity;
- and
- after bonding the dielectric layer on the surface of the semiconductor substrate to the membrane layer, removing at least a portion of the semiconductor substrate.
8 more elements
Dependencies are inferred from the claim text.