B81C 2201/014

By depositing an etch stop layer

Official title: by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

B81C2201/014 (By depositing an etch stop layer) appears on 254 US grants and 258 published applications in this corpus.

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Granted patents
254
Published applications
258
Assignees
131
Inventors
576
Latest grant
6 Oct 2026

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B81C 2201/014: granted patents and published applications per publication year
YearGranted patentsPublished applications
199210
199300
199410
199520
199620
199700
199850
199950
200070
200144
200268
2003117
2004610
200539
2006810
200794
200886
2009212
2010711
201178
201295
201359
20141213
20151110
20161318
20171418
2018138
20191611
202099
20211011
202278
2023719
20241114
2025117
2026129

By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.

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