Atomic-smooth device with microstructure, and method for preparing same

A method for preparing an atomic-smooth device with a microstructure, wherein the atomic-smooth device with the microstructure comprises a substrate, a bonding material, a second dielectric layer on the substrate, the microstructure, and a first dielectric layer in sequence, wherein a surface of the first dielectric layer is an atomic-smooth surface,

• the method comprises:
• in step 1, growing the first dielectric layer on a surface of a two-dimensional material to obtain an atomic-smooth film, wherein the two-dimensional material is graphene or highly oriented pyrolytic graphite (HOPG);
• in step 2, preparing the microstructure on a surface of the first dielectric layer facing away from the two-dimensional material by micromachining;
• in step 3, growing the second dielectric layer on a surface of the microstructure facing away from the first dielectric layer;
• in step 4, coating the bonding material on the second dielectric layer;
• in step 5, connecting the second dielectric layer to the substrate through the bonding material;
• in step 6, peeling off the two-dimensional material to obtain a structure having a small amount of residual two-dimensional material, the first dielectric layer, the microstructure, the second dielectric layer, and the bonding material;
• in step 7, removing the small amount of residual two-dimensional material on the structure by oxygen plasma etching;
• and
• in step 8, obtaining the atomic-smooth device with the microstructure.