B81C 1/00507
Formation of buried layers by techniques other than deposition
Official title: {Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements (SIMOX techniques H10W10/10)}
B81C1/00507 (Formation of buried layers by techniques other than deposition) appears on 14 US grants and 17 published applications in this corpus.
Search patents in B81C- Granted patents
- 14
- Published applications
- 17
- Assignees
- 17
- Inventors
- 37
- Latest grant
- 2 Aug 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 0 | 0 |
| 2006 | 2 | 3 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 3 |
| 2011 | 2 | 1 |
| 2012 | 0 | 2 |
| 2013 | 1 | 1 |
| 2014 | 1 | 1 |
| 2015 | 1 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 1 | 3 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
By publication year.
Recent patents
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Most cited
By later US patents
- Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof71US 6,277,712 B1Samsung Electronics Co., Ltd. · 2001
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- Method of making cavities in a semiconductor wafer6US 6,987,051 B2S. O. I. Tec Silicon on Insulator Technologies · 2006