Method of making cavities in a semiconductor wafer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsWalter Schwarzenbach, Christophe Maleville
Life of this patent
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Abstract
The invention provides a method of making a semiconductor structure that includes a surface layer of silicon, a buried insulating layer, and a substrate. The method includes implanting atoms through at least a portion of the insulating layer; and etching the insulating layer in at least a portion of the layer through which atoms have been implanted.
Claims26
A method of making a semiconductor structure having a surface layer of a first material, a sub-surface layer of a second, different material, and a supporting substrate, which method comprises:
- selectively implanting atoms through the surface layer and at least a portion of the sub-surface layer to render the first and second materials receptive to removal by etching;
- and
- selectively etching the portion of the sub-surface layer through which atoms have been implanted in order to form a cavity beneath the surface layer.
A method of making a semiconductor structure having a surface layer of a first material, a sub-surface layer of a second, different material, and a supporting substrate, which method comprises:
- selectively implanting atoms through the surface layer and at least a portion of the sub-surface layer to render the first and second materials receptive to removal by etching, wherein the selective implantation of atoms is obtained by masking a portion of the surface layer and implanting atoms in a zone that has a shape that corresponds with a non-masked portion of the surface layer;
- and
- selectively etching the portion of the sub-surface layer through which atoms have been implanted in order to form a cavity beneath the sub-surface layer.
A method of making a semiconductor structure having a surface layer of a first material, a sub-surface layer of a second, different material, and a supporting substrate, which method comprises:
- selectively implanting atoms through the surface layer and at least a portion of the sub-surface layer to render the first and second materials receptive to removal by etching;
- forming at least one hole in the surface layer to a depth that leads to the sub-surface layer;
- and
- selectively etching the portion of the sub-surface layer through which atoms have been implanted in order to form a cavity beneath the surface layer.
Dependencies are inferred from the claim text.