Method for processing silicon wafer with through cavity structure
AssigneeShenyang Silicon Technology Co., Ltd.
InventorXiang LI
Life of this patent
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Abstract
A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values.
Claims8
A method for processing a silicon wafer with a through cavity structure, comprising:
- (1) performing ion implantation on a silicon wafer or a pattern wafer;
- (2) implanting a dummy substrate, and bonding the silicon wafer to the pattern wafer;
- (3) grinding and polishing by a mechanical grinding or/and chemical polishing method, using the dummy substrate as a substrate, thinning the pattern wafer, grinding the pattern wafer to a depth of exposing the pattern, and exposing a cavity which is not originally exposed;
- (4) performing pattern-to-pattern bonding on the two silicon wafers subjected to the steps (1) and (2);
- and
- (5) peeling the dummy substrate playing a protective role by low-temperature annealing and microwave splitting operation to realize the silicon wafer of a through structure.
Dependencies are inferred from the claim text.