Y10S 977/938
Field effect transistors, fets, with nanowire- or nanotube-channel region
Official title: Field effect transistors, FETS, with nanowire- or nanotube-channel region
Y10S977/938 (Field effect transistors, fets, with nanowire- or nanotube-channel region) appears on 420 US grants and 425 published applications in this corpus.
Search patents in Y10S- Granted patents
- 420
- Published applications
- 425
- Assignees
- 148
- Inventors
- 649
- Latest grant
- 26 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 4 |
| 2003 | 3 | 10 |
| 2004 | 8 | 16 |
| 2005 | 11 | 30 |
| 2006 | 18 | 36 |
| 2007 | 23 | 40 |
| 2008 | 33 | 36 |
| 2009 | 40 | 32 |
| 2010 | 48 | 43 |
| 2011 | 48 | 25 |
| 2012 | 29 | 20 |
| 2013 | 16 | 21 |
| 2014 | 27 | 37 |
| 2015 | 29 | 13 |
| 2016 | 18 | 12 |
| 2017 | 14 | 21 |
| 2018 | 15 | 10 |
| 2019 | 11 | 7 |
| 2020 | 7 | 2 |
| 2021 | 6 | 4 |
| 2022 | 2 | 2 |
| 2023 | 3 | 1 |
| 2024 | 0 | 1 |
| 2025 | 3 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Gate all around device with fully-depleted silicon-on-insulator26 Aug 2025US 12,402,351 B2APPLIED Materials.Inc.
- Solid-state image pickup apparatus and electronic equipment19 Aug 2025US 12,396,279 B2Sony Semiconductor Solutions Corporation
- Semiconductor device including multi-thickness nanowires21 Jan 2025US 12,206,026 B2Samsung Electronics Co., Ltd.
- Solid-state image pickup apparatus and electronic equipment31 Oct 2023US 11,804,500 B2Sony Semiconductor Solutions Corporation
- Semiconductor device including nanowires having multi-thickness regions20 Jun 2023US 11,682,735 B2Samsung Electronics Co., Ltd.
- Gate all around device with fully-depleted silicon-on-insulator13 Nov 2025US 2025/0351452 A1APPLIED Materials.Inc.
- Semiconductor device and method for fabricating the same10 Apr 2025US 2025/0120129 A1Samsung Electronics Co., Ltd.
- Solid-state image pickup apparatus and electronic equipment21 Mar 2024US 2024/0096915 A1Sony Semiconductor Solutions Corporation
- Semiconductor device5 Oct 2023US 2023/0317860 A1Samsung Electronics Co., Ltd.
- Electronic device11 Aug 2022US 2022/0252565 A1
Most cited
By later US patents
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- Self-aligned process for nanotube/nanowire FETs521US 8,119,466 B2International Business Machines Corporation · 2012
- Tri-gate devices and methods of fabrication426US 6,858,478 B2Intel Corporation · 2005
- Deposition on a nanowire using atomic layer deposition350US 8,900,935 B2International Business Machines Corporation · 2014
- Methodology for electrically induced selective breakdown of nanotubes291US 6,423,583 B1International Business Machines Corporation · 2002