Back to results
US 12,206,026 B2Granted
Semiconductor device including multi-thickness nanowires
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Claims15
A semiconductor device, comprising:
- a substrate including a first region and a second region;
- a first nanowire extending in a first direction on the first region of the substrate;
- a first gate electrode extending in a second direction intersecting with the first direction and surrounding a periphery of the first nanowire;
- a first gate insulating film between the first nanowire and the first gate electrode;
- a first source/drain on opposite sides of the first gate electrode and on the substrate;
- a first gate spacer between the first gate electrode and the first source/drain, the first nanowire passing through the first gate spacer to connect with the first source/drain;
- a second nanowire extending in a lengthwise direction on the second region of the substrate;
- a second gate electrode extending lengthwise in a direction perpendicular to the lengthwise direction of the second nanowire and surrounding a periphery of the second nanowire;
- a second gate insulating film between the second nanowire and the second gate electrode;
- and
- a second source/drain on opposite sides of the second gate electrode and on the substrate,
- wherein the first nanowire includes:
- a first center region overlapping the first gate electrode;
- and
- a first side region between the first center region and the first source/drain,
- wherein a first thickness of the first center region is different from a second thickness of the first side region,
- wherein the second source/drain includes a convex side surface facing the second gate electrode,
- wherein the convex side surface of the second source/drain is in contact with the second nanowire and the second gate insulating film, and
- wherein a first length of the second gate electrode on a lower surface of the second nanowire in a width direction of the second gate electrode is different from a second length of the second gate electrode on an upper surface of the second nanowire in the width direction of the second gate electrode.
16 more elements
A semiconductor device, comprising:
- a substrate including an NMOS region and a PMOS region;
- a first nanowire extending in a first direction on the NMOS region;
- a first gate electrode extending in a second direction intersecting with the first direction and surrounding a periphery of the first nanowire;
- a first source/drain on opposite sides of the first gate electrode and on the substrate;
- a first gate spacer between the first gate electrode and the first source/drain, the first nanowire passing through the first gate spacer to connect with the first source/drain;
- a second nanowire extending in a lengthwise direction on the PMOS region;
- a second gate electrode extending in a direction perpendicular to the lengthwise direction of the second nanowire and surrounding a periphery of the second nanowire;
- a gate insulating film between the second nanowire and the second gate electrode;
- and
- a second source/drain on opposite sides of the second gate electrode and on the substrate,
- wherein the first nanowire includes:
- a first center region overlapping the first gate electrode;
- and
- a first side region between the first center region and the first source/drain,
- wherein a first thickness of the first center region is smaller than a second thickness of the first side region, and
- wherein the second source/drain is in contact with the gate insulating film.
13 more elements
Dependencies are inferred from the claim text.