Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Hun LEE, Dong Woo KIM, Dong Chan SUH, Sun Jung KIM
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Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Claims21
-15. (canceled)
A method for fabricating a semiconductor device, comprising:
- forming a plurality of channel regions extending in a first direction and spaced apart from each other on a substrate, the plurality of channel regions including a first channel region which is an uppermost channel region of the plurality of channel regions;
- forming a gate electrode surrounding a periphery of the plurality of channel regions and extending in a second direction intersecting with the first direction;
- and
- forming a gate spacer on opposite sides of the gate electrode,
- wherein the first channel region includes:
- a first center region overlapping the gate electrode;
- and
- a first side region overlapping the gate spacer, on opposite sides of the first center region,
- wherein a first thickness of the first center region is smaller than a second thickness of the first side region.
A method for fabricating a semiconductor device, comprising:
- forming a plurality of channel regions extending in a first direction and spaced apart from each other on a substrate, the plurality of channel regions including a first channel region which is an uppermost channel region of the plurality of channel regions;
- forming a gate electrode surrounding a periphery of the plurality of channel regions and extending in a second direction intersecting with the first direction;
- and
- forming a gate spacer on opposite sides of the gate electrode,
- wherein the first channel region includes:
- a first center region overlapping the gate electrode;
- and
- a first side region overlapping the gate spacer, on opposite sides of the first center region, and
- wherein a first height of an upper surface of the first center region is different from a second height of an upper surface of the first side region.
A method for fabricating a semiconductor device, comprising:
- forming a first channel region extending in a first direction on a substrate;
- forming a gate electrode surrounding a periphery of the first channel region and extending in a second direction intersecting with the first direction;
- forming a source/drain on opposite sides of the gate electrode and on the substrate;
- forming a gate spacer between the gate electrode and the source/drain;
- and
- forming a gate insulating film between the first channel region and the gate electrode and between the gate spacer and the gate electrode,
- wherein the first channel region includes:
- a first center region overlapping the gate electrode;
- and
- a first side region overlapping the gate spacer, on opposite sides of the first center region,
- wherein a first thickness of the first center region is smaller than a second thickness of the first side region,
- wherein a first height of an upper surface of the first center region is lower than a second height of an upper surface of the first side region,
- wherein the gate spacer includes an outer spacer in contact with a side surface of the first channel region, and an inner spacer in contact with a lower surface of the first channel region, and
- wherein the gate spacer includes a concave side surface adjacent to the source/drain.
Dependencies are inferred from the claim text.