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US 12,402,351 B2Granted
Gate all around device with fully-depleted silicon-on-insulator
AssigneeApplied Materials, Inc.
InventorsAshish Pal, El Mehdi Bazizi, Benjamin Colombeau, Myungsun Kim
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Abstract
Horizontal gate-all-around devices and methods of manufacturing are described. The hGAA devices include a fully-depleted silicon-on-insulator (FD-SOI) under the channel layers in the same footprint as the hGAA. The buried dielectric insulating layer of the FD-SOI includes one or more of silicon oxide (SiOx), silicon nitride (SiN), silicon carbide (SiC), and a high-k material, and the buried dielectric insulating layer has a thickness in a range of from 0 nm to 10 nm.
Claims12
A semiconductor device comprising:
- a plurality of horizontal channel layers extending between a source region and a drain region, the plurality of horizontal channel layers having a top surface, a bottom surface, and two side surfaces;
- a metal gate structure adjacent each of the plurality of horizontal channel layers;
- and
- a fully-depleted silicon-on-insulator (FD-SOI) transistor below the plurality of horizontal channel layers and the metal gate structure, the fully-depleted silicon-on-insulator (FD-SOI) transistor including
- a silicon layer below the metal gate structure extending between the source region and the drain region, the silicon layer having a top surface and a bottom surface;
- and
- a buried dielectric isolation layer directly on the bottom surface of the silicon layer and extending the entire length of the source region and the drain region, the buried dielectric isolation layer disposed on a substrate.
4 more elements
Dependencies are inferred from the claim text.