Back to results
US 2022/0252565 A1Published application
Electronic device
OwnerBao Traninventor
Life of this patent
Estimating the term…
Abstract
A device includes an upper metallic layer, a lower layer, and a memory array positioned between the upper and lower layers, wherein the memory electrical characteristic changes when storing data.
Claims20
A device, comprising:
- a first layer;
- a second layer formed next to the first layer to provide data storage, the second layer having a lower layer formed next to the first layer;
- a data storage element between the first and second layers;
- and
- a learning network or processing network coupled to the data storage element.
2 more elements
A device, comprising:
- a resistive, optical or magnetic nano memory;
- and
- a neural network receiving data from the nano memory to be trained to recognize data from the memory.
A electronic device, comprising:
- a first layer fabricated in silicon;
- a second layer formed next to the first layer to provide data storage, the second layer having a lower layer formed next to the first layer;
- a resistive element;
- and an upper layer formed next to the resistive element, wherein resistance changes to store data.
1 more element
Dependencies are inferred from the claim text.