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US 11,682,735 B2Granted
Semiconductor device including nanowires having multi-thickness regions
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Hun Lee, Dong Woo Kim, Dong Chan Suh, Sun Jung Kim
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Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Claims16
A semiconductor device, comprising:
- a substrate;
- a first nanowire extending in a first direction on the substrate;
- a second nanowire extending in the first direction on the substrate, the second nanowire being spaced apart farther away from the substrate than the first nanowire;
- a gate electrode extending in a second direction intersecting with the first direction and surrounding a periphery of each of the first and second nanowires;
- a source/drain on opposite sides of the gate electrode and on the substrate;
- and
- a gate spacer between the gate electrode and the source/drain, each of the first and second nanowires passing through the gate spacer to connect with the source/drain,
- wherein each of the first and second nanowires includes:
- a center region overlapping the gate electrode;
- and
- a side region between the center region and the source/drain,
- wherein a thickness of the side region increases and then decreases as it goes away from the center region,
- wherein the gate spacer includes a concave side surface facing the source/drain, and
- wherein a first length of the first nanowire in the first direction is greater than a second length of the second nanowire in the first direction.
11 more elements
A semiconductor device, comprising:
- a substrate;
- a plurality of nanowires extending in a first direction and spaced apart from each other on the substrate;
- a gate electrode surrounding a periphery of the plurality of nanowires and extending in a second direction intersecting with the first direction;
- a source/drain on opposite sides of the gate electrode and on the substrate;
- and
- a gate spacer between the gate electrode and the source/drain, the plurality of nanowires passing through the gate spacer to connect with the source/drain;
- wherein each nanowires of the plurality of nanowires includes:
- a center region overlapping the gate electrode;
- and
- a side region overlapping the gate spacer, on opposite sides of the first center region,
- wherein a first thickness of the center region is smaller than a second thickness of the side region,
- wherein the second thickness of the side region decreases as it goes away from the gate electrode,
- wherein the gate spacer includes a concave side surface facing the source/drain, and
- wherein lengths of the plurality of nanowires in the first direction decrease as they go away from the substrate.
11 more elements
Dependencies are inferred from the claim text.