Solid-state image pickup apparatus and electronic equipment
AssigneeSony Semiconductor Solutions Corporation
InventorsHiroaki Ammo, Hirokazu Ejiri, Akiko Honjo
Life of this patent
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Abstract
A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.
Claims6
A solid-state image pickup apparatus, comprising:
- a photoelectric conversion section configured to generate and hold a charge based on incident light;
- a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor), wherein the transfer section is configured to transfer the charge held in the photoelectric conversion section;
- and
- an insulating film between the photoelectric conversion section and a gate of the V-NW transistor that forms the transfer section, wherein the insulating film is an impurity-containing insulating film that comprises boron.
A solid-state image pickup apparatus, comprising:
- a photoelectric conversion section configured to generate and hold a charge based on incident light;
- a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor), wherein the transfer section is configured to transfer the charge held in the photoelectric conversion section;
- an insulating film between the photoelectric conversion section and a gate of the V-NW transistor that forms the transfer section, wherein the insulating film is an impurity-containing insulating film that comprises boron;
- a reset section configured to reset the charge;
- an amplification section configured to provide the charge as an electrical signal;
- and
- a selection section configured to selectively output the electrical signal provided by the amplification section to a latter part, wherein at least one of the transfer section, the reset section, the amplification section, or the selection section includes the V-NW transistor.
Dependencies are inferred from the claim text.