Solid-state image pickup apparatus and electronic equipment
AssigneeSony Semiconductor Solutions Corporation
InventorsHiroaki Ammo, Hirokazu Ejiri, Akiko Honjo
Life of this patent
Estimating the term…
Abstract
A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.
Claims12
A light detecting device, comprising:
- a photoelectric conversion region in a substrate, wherein the photoelectric conversion region is configured to generate a charge;
- a first transistor that includes:
- a first semiconductor area that extends in a vertical direction with respect to the substrate;
- a gate around the first semiconductor area;
- a first insulating film between the gate and the first semiconductor area;
- and
- a second insulating film between the gate and the photoelectric conversion region;
- a second transistor electrically connected to the first transistor, wherein
- the first transistor is configured to transfer the generated charge to the second transistor,
- the second transistor includes a second semiconductor area, and
- the second semiconductor area is at a same level as of at least a part of the first semiconductor area;
- and
- a wiring layer configured to electrically connect the first transistor to the second transistor, wherein the wiring layer is on the substrate.
A light detecting device, comprising:
- a photoelectric conversion region disposed in a substrate, wherein the photoelectric conversion region is configured to generate a charge;
- a first transistor that includes:
- a first semiconductor area that extends in a vertical direction with respect to the substrate;
- a gate around the first semiconductor area;
- a first insulating film between the gate and the first semiconductor area;
- and a second insulating film between the gate and the photoelectric conversion region;
- a second transistor electrically connected to the first transistor, wherein
- the first transistor is configured to transfer the generated charge to the second transistor,
- the second transistor includes a second semiconductor area, and a current direction in the second semiconductor area is opposite to a current direction in the first semiconductor area;
- and
- a wiring layer configured to electrically connect the first transistor to the second transistor, wherein the wiring layer is on the substrate.
Dependencies are inferred from the claim text.