Y10S 438/963
Removing process residues from vertical substrate surfaces
Y10S438/963 (Removing process residues from vertical substrate surfaces) appears on 151 US grants and 54 published applications in this corpus.
Search patents in Y10S- Granted patents
- 151
- Published applications
- 54
- Assignees
- 64
- Inventors
- 306
- Latest grant
- 10 Feb 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 4 | 0 |
| 1995 | 7 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 9 | 0 |
| 1999 | 14 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 6 |
| 2002 | 12 | 8 |
| 2003 | 6 | 3 |
| 2004 | 10 | 9 |
| 2005 | 4 | 6 |
| 2006 | 6 | 7 |
| 2007 | 6 | 5 |
| 2008 | 6 | 4 |
| 2009 | 2 | 2 |
| 2010 | 5 | 2 |
| 2011 | 1 | 0 |
| 2012 | 5 | 2 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
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- Semiconductor device production method20 Dec 2012US 2012/0322226 A1Fujitsu Semiconductor Limited
- Method of forming a high capacitance diode7 Jun 2012US 2012/0142171 A1Semiconductor Components Industries, LLC
- Methods of Etching Oxide, Reducing Roughness, and Forming Capacitor Constructions2 Sep 2010US 2010/0221916 A1Micron Technology, Inc.
- Method of forming a high capacitance diode and structure therefor25 Mar 2010US 2010/0072573 A1Semiconductor Components Industries, LLC
- Method for increasing the removal rate of photoresist layer2 Jul 2009US 2009/0169767 A1United Microelectronics Corp.
Most cited
By later US patents
- Oxygen free plasma stripping process269US 6,281,135 B1Axcelis Technologies, Inc. · 2001
- Anti-corrosion treatment for patterning of metallic layers160US 4,668,335 AAdvanced Micro Devices, Inc. · 1987
- Method of producing high quality silicon surface for selective epitaxial growth of silicon116US 5,780,343 ANational Semiconductor Corporation · 1998
- Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer103US 5,316,974 ATexas Instruments Incorporated · 1994
- Method for manufacturing semiconductor chips using protecting pricing and separating sheets96US 6,426,275 B1Tokyo Seimitsu Co., Ltd. · 2002