Method of producing a semiconductor device including treatment with dilute hydrofluoric acid
AssigneeFujitsu Semiconductor Limited
InventorsNaomi Yanai, Yuka Kase, Hiroyuki Ogawa
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Abstract
A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
Claims17
A semiconductor device production method comprising:
- treating a wafer that includes a silicon substrate with dilute hydrofluoric acid in a bath;
- introducing first water into the bath and discharging the dilute hydrofluoric acid from the bath;
- and
- introducing H2O2 and second water warmer than the first water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of the second water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
A semiconductor device production method comprising:
- treating a wafer that includes a silicon substrate with dilute hydrofluoric acid treatment in a bath;
- introducing first water into the bath and discharging the dilute hydrofluoric acid from the bath;
- and
- introducing second water warmer than the first water into the bath after the discharge of the dilute hydrofluoric acid from the bath, and introducing H2O2 into the bath before temperature in the bath reaches 30° C.
Dependencies are inferred from the claim text.