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US 2009/0169767 A1Published application
Method for increasing the removal rate of photoresist layer
AssigneeUnited Microelectronics Corp.
InventorsWen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
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Abstract
A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
Claims16
A method for increasing the removal rate of a photoresist layer, comprising:
- providing a substrate;
- and
- performing a pre-treatment process of the substrate before forming a photoresist layer.
Dependencies are inferred from the claim text.