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US 2010/0072573 A1Published application
Method of forming a high capacitance diode and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsDavid D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs
Life of this patent
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Abstract
In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
Claims20
A high capacitance diode comprising:
- a semiconductor substrate of a first conductivity type having a first doping concentration and first and second surfaces;
- a first region of the first conductivity type adjacent the first surface of the semiconductor substrate, the first region having a first doping concentration;
- a semiconductor layer of a second conductivity type adjacent the first region and overlying the semiconductor substrate, the semiconductor layer having a second doping concentration that is less than the first doping concentration and also having a first surface that is opposite to the first region;
- a doped region on the first surface of the semiconductor layer having approximately the first doping concentration;
- and
- a plurality of semiconductor channels of a second conductivity type extending from doped region through the semiconductor layer and into the semiconductor substrate, the plurality of semiconductor channels having approximately the first doping concentration.
3 more elements
A method of forming a high capacitance zener diode comprising:
- providing a semiconductor substrate of a first conductivity type
- forming a semiconductor layer of a second conductivity type overlying the semiconductor substrate, the semiconductor layer having a first doping concentration and a surface;
- forming a first region of the first conductivity type adjacent the surface of the semiconductor substrate, the first region having a second doping concentration that is greater than the first doping concentration;
- and
- forming a semiconductor channel extending from within the semiconductor layer through the semiconductor layer and into the semiconductor substrate, the semiconductor channel having the second conductivity type and approximately the second doping concentration wherein an interface between the semiconductor channel and the first region forms the zener diode.
2 more elements
A method of forming a high capacitance diode comprising:
- providing a semiconductor material of a first conductivity type and a first doping concentration;
- forming a plurality of semiconductor channels extending into the semiconductor material, the plurality of semiconductor channels having a second conductivity type and a second doping concentration that is at least as great as the first doping concentration wherein an interface between the semiconductor channel and the semiconductor material forms a zener diode;
- and
- forming a conductor electrically contacting the plurality of semiconductor channels.
1 more element
Dependencies are inferred from the claim text.