Back to results
US 8,129,101 B2Granted
Method for increasing the removal rate of photoresist layer
OwnerWen-Hsien Huang, Min-Chieh Yang +1inventors
InventorsWen-Hsien Huang, Min-Chieh Yang, Jiunn-Hsing Liao
Life of this patent
Estimating the term…
Abstract
A method for increasing the removal rate of a photoresist layer is provided. The method includes performing a pre-treatment of a substrate, such as a plasma process, before forming the photoresist layer. The method can be applied to the fabrication of semiconductor devices for increasing the removal rate of the photoresist layer.
Claims14
A method for increasing the removal rate of a photoresist layer, comprising:
- providing a substrate;
- and
- performing a plasma treatment to the substrate before forming a photoresist layer, wherein a gas used for performing the plasma treatment is selected from the group consisting of oxygen, nitrous oxide and combination thereof.
Dependencies are inferred from the claim text.