Semiconductor device production method
AssigneeFujitsu Semiconductor Limited
InventorsNaomi Yanai, Yuka Kase, Hiroyuki Ogawa
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Abstract
A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
Claims17
A semiconductor device production method comprising:
- treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath;
- introducing water into the bath while discharging the dilute hydrofluoric acid from the bath;
- and
- introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
A semiconductor device production method comprising:
- treating a wafer which contains a silicon substrate with dilute hydrofluoric acid treatment in a bath;
- introducing water into the bath while discharging the dilute hydrofluoric acid from the bath;
- and
- introducing warm water warmer than the above-mentioned water into the bath after the discharge of the dilute hydrofluoric acid from the bath, and introducing H2O2 into the bath before temperature in the bath reaches 30° C.
Dependencies are inferred from the claim text.