Y10S 438/95
Multilayer mask including nonradiation sensitive layer
Y10S438/95 (Multilayer mask including nonradiation sensitive layer) appears on 233 US grants and 115 published applications in this corpus.
Search patents in Y10S- Granted patents
- 233
- Published applications
- 115
- Assignees
- 94
- Inventors
- 384
- Latest grant
- 1 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 5 | 0 |
| 1986 | 7 | 0 |
| 1987 | 2 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 6 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 6 | 0 |
| 1996 | 5 | 0 |
| 1997 | 8 | 0 |
| 1998 | 8 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 9 | 5 |
| 2002 | 10 | 4 |
| 2003 | 9 | 20 |
| 2004 | 12 | 6 |
| 2005 | 8 | 12 |
| 2006 | 9 | 11 |
| 2007 | 12 | 11 |
| 2008 | 9 | 8 |
| 2009 | 8 | 6 |
| 2010 | 11 | 9 |
| 2011 | 10 | 2 |
| 2012 | 5 | 1 |
| 2013 | 2 | 4 |
| 2014 | 1 | 1 |
| 2015 | 6 | 4 |
| 2016 | 2 | 2 |
| 2017 | 0 | 0 |
| 2018 | 2 | 2 |
| 2019 | 1 | 2 |
| 2020 | 3 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 2 |
| 2024 | 0 | 0 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Method for forming patterned mask layer1 Apr 2025US 12,266,528 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming patterned mask layer11 Jul 2023US 11,699,589 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Alternating hardmasks for tight-pitch line formation9 Nov 2021US 11,171,002 B2Tessera, Inc.
- Semiconductor element and display device using the same1 Dec 2020US 10,854,642 B2Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor element and display device using the same30 Jun 2020US 10,700,106 B2Semiconductor Energy Laboratory Co.Ltd.
- Method for forming patterned mask layer19 Jun 2025US 2025/0201562 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming patterned mask layer2 Nov 2023US 2023/0352303 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming patterned mask layer2 Feb 2023US 2023/0030767 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor element and display device using the same1 Apr 2021US 2021/0098508 A1Semiconductor Energy Laboratory Co.Ltd.
- Alternating hardmasks for tight-pitch line formation20 Aug 2020US 2020/0266066 A1Tessera, Inc.
Most cited
By later US patents
- Method for integrated circuit fabrication using pitch multiplication457US 7,115,525 B2Micron Technology, Inc. · 2006
- Pattern definition in an organic layer359US 3,962,004 ARCA Corporation · 1976
- Bilayer metallization cap for photolithography286US 5,219,788 AIBM Corporation · 1993
- Processing techniques for achieving production-worthy, low dielectric, low dielectric, low interconnect resistance and high performance IC113US 5,679,608 AAdvanced Micro Devices, Inc. · 1997
- Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings109US 4,692,205 AInternational Business Machines Corporation · 1987