Y10S 438/942
Masking
Y10S438/942 (Masking) appears on 2,200 US grants and 979 published applications in this corpus.
Search patents in Y10S- Granted patents
- 2,200
- Published applications
- 979
- Assignees
- 442
- Inventors
- 3,338
- Latest grant
- 7 Oct 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 22 | 0 |
| 1978 | 11 | 0 |
| 1979 | 10 | 0 |
| 1980 | 15 | 0 |
| 1981 | 18 | 0 |
| 1982 | 24 | 0 |
| 1983 | 23 | 0 |
| 1984 | 27 | 0 |
| 1985 | 31 | 0 |
| 1986 | 36 | 0 |
| 1987 | 38 | 0 |
| 1988 | 30 | 0 |
| 1989 | 38 | 0 |
| 1990 | 40 | 0 |
| 1991 | 38 | 0 |
| 1992 | 37 | 0 |
| 1993 | 49 | 0 |
| 1994 | 55 | 0 |
| 1995 | 56 | 0 |
| 1996 | 76 | 0 |
| 1997 | 90 | 0 |
| 1998 | 75 | 0 |
| 1999 | 104 | 0 |
| 2000 | 95 | 0 |
| 2001 | 98 | 34 |
| 2002 | 87 | 91 |
| 2003 | 92 | 106 |
| 2004 | 113 | 109 |
| 2005 | 88 | 101 |
| 2006 | 83 | 93 |
| 2007 | 77 | 82 |
| 2008 | 70 | 96 |
| 2009 | 86 | 57 |
| 2010 | 97 | 55 |
| 2011 | 75 | 41 |
| 2012 | 67 | 34 |
| 2013 | 24 | 18 |
| 2014 | 35 | 20 |
| 2015 | 30 | 17 |
| 2016 | 7 | 8 |
| 2017 | 5 | 2 |
| 2018 | 3 | 3 |
| 2019 | 2 | 3 |
| 2020 | 3 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 1 |
| 2023 | 2 | 3 |
| 2024 | 1 | 1 |
| 2025 | 2 | 2 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Semiconductor patterning and resulting structures7 Oct 2025US 12,437,996 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming patterned mask layer1 Apr 2025US 12,266,528 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor patterning and resulting structures12 Mar 2024US 11,929,254 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Installation with distribution mask for vapor deposition of a coating on optical articles on a rotary support21 Nov 2023US 11,821,072 B2Bnl Eurolens
- Method for forming patterned mask layer11 Jul 2023US 11,699,589 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor patterning and resulting structures23 Oct 2025US 2025/0329533 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming patterned mask layer19 Jun 2025US 2025/0201562 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Patterning and Resulting Structures30 May 2024US 2024/0177995 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming patterned mask layer2 Nov 2023US 2023/0352303 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Patterning and Resulting Structures6 Apr 2023US 2023/0108424 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures742US 7,611,980 B2Micron Technology, Inc. · 2009
- Method for manufacturing porous structure and method for forming pattern645US 6,565,763 B1Kabushiki Kaisha Toshiba · 2003
- Pulsed PECVD method for modulating hydrogen content in hard mask545US 7,381,644 B1Novellus Systems, Inc. · 2008
- Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers518US 5,661,053 ASanDisk Corporation · 1997
- Method for integrated circuit fabrication using pitch multiplication457US 7,115,525 B2Micron Technology, Inc. · 2006