Y10S 438/943
Movable
Y10S438/943 (Movable) appears on 36 US grants and 17 published applications in this corpus.
Search patents in Y10S- Granted patents
- 36
- Published applications
- 17
- Assignees
- 29
- Inventors
- 78
- Latest grant
- 21 Nov 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 2 | 5 |
| 2004 | 4 | 2 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 2 | 2 |
| 2008 | 0 | 3 |
| 2009 | 2 | 1 |
| 2010 | 1 | 1 |
| 2011 | 2 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 1 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Installation with distribution mask for vapor deposition of a coating on optical articles on a rotary support21 Nov 2023US 11,821,072 B2Bnl Eurolens
- Method for manufacturing group III nitride semiconductor light-emitting element, group III nitride semiconductor light-emitting element, lamp, and reticle5 Aug 2014US 8,796,055 B2Toyoda Gosei Co., Ltd.
- Method for manufacturing semiconductor device using multiple ion implantation masks19 Jul 2011US 7,981,817 B2Panasonic Corporation
- Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors28 Jun 2011US 7,968,459 B2International Business Machines Corporation
- LED including photonic crystal structure5 Jan 2010US 7,642,108 B2Philips Lumileds Lighting Company, LLC
- Apparatus for vapor deposition of a coating on optical articles19 Sep 2019US 2019/0284679 A1Bnl Eurolens
- Method for manufacturing group iii nitride semiconductor light-emitting element, group iii nitride semiconductor light-emitting element, lamp, and reticle29 Aug 2013US 2013/0221388 A1Toyoda Gosei Co., Ltd.
- Semiconductor device and process for manufacturing the same25 Feb 2010US 2010/0048004 A1Panasonic Corporation
- Disposable organic spacers15 Jan 2009US 2009/0017587 A1Freescale Semiconductor, Inc.
- Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors23 Oct 2008US 2008/0258220 A1International Business Machines Corporation
Most cited
By later US patents
- Method of fabricating sub-half-micron trenches and holes118US 5,459,099 AThe United States of America as represented by the Secretary of the Navy · 1995
- Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors101US 7,968,459 B2International Business Machines Corporation · 2011
- Aperture masks for circuit fabrication92US 6,897,164 B23M Innovative Properties Company · 2005
- Method of fabricatring sub-half-micron trenches and holes52US 5,420,067 AThe United States of America as represented by the Secretary of the Navy · 1995
- Method of forming borderless contacts using a removable mandrel50US 5,466,636 AInternational Business Machines Corporation · 1995