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US 2009/0017587 A1Published application
Disposable organic spacers
AssigneeFreescale Semiconductor, Inc.
InventorsPaul A. Grudowski, Kurt H. Junker, Thomas J. Kropewnicki, Andrew G. Nagy
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Abstract
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode (210); (b) forming a first set of organic spacers (213) adjacent to said first electrode; (c) depositing a first photo mask (215) over the structure; and (d) simultaneously removing the first set of organic spacers and the first photo mask.
Claims20
A method for making a semiconductor device, comprising:
- providing a semiconductor structure comprising a first gate electrode;
- forming a first set of organic spacers adjacent to said first electrode;
- depositing a first photo mask over the structure;
- and
- concurrently removing the first set of organic spacers and the first photo mask.
2 more elements
A method for making a semiconductor device, comprising:
- providing a semiconductor structure having a gate electrode disposed on a semiconductor substrate;
- forming a set of organic spacers adjacent to the gate electrode;
- and
- subjecting the structure to silicidation.
1 more element
A method for making a semiconductor device, comprising:
- providing a structure comprising first and second gate electrodes disposed on a semiconductor substrate;
- depositing a first layer of a first organic material, the first layer having a first average thickness;
- etching the first layer wit a first etch to define a first set of spacer structures adjacent to the first electrode;
- depositing a second layer of a first organic material, the second layer having a second average thickness which is different from the first average thickness;
- and
- etching the second layer with a second etch to define a second set of spacer structures adjacent to the second electrode.
3 more elements
Dependencies are inferred from the claim text.