Method for forming patterned mask layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chen CHANG, Chien-Wen LAI, Chih-Min HSIAO
Estimating the term…
A method for forming a patterned mask layer is provided. The method includes forming a layer over a substrate and forming a first strip structure and a second strip structure over the layer. The method also includes forming a spacer layer between the first strip structure, the second strip structure, and the layer. The spacer layer has an H-shape, the spacer layer has a first trench and a second trench spaced apart from each other, and the first trench and the second trench expose portions of the layer. The method further includes forming a third strip structure and a fourth strip structure in the first trench and the second trench, respectively. In addition, the method includes removing the spacer layer. The first strip structure, the second strip structure, the third strip structure, and the fourth strip structure together form a patterned mask layer.
A method for forming a patterned mask layer, comprising:
A method for forming a patterned mask layer, comprising:
A method for forming a patterned mask layer, comprising:
Dependencies are inferred from the claim text.