Y10S 438/946
Step and repeat
Y10S438/946 (Step and repeat) appears on 54 US grants and 40 published applications in this corpus.
Search patents in Y10S- Granted patents
- 54
- Published applications
- 40
- Assignees
- 36
- Inventors
- 106
- Latest grant
- 25 Oct 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 2 | 3 |
| 2003 | 5 | 3 |
| 2004 | 3 | 6 |
| 2005 | 3 | 6 |
| 2006 | 3 | 4 |
| 2007 | 4 | 6 |
| 2008 | 6 | 3 |
| 2009 | 3 | 0 |
| 2010 | 3 | 3 |
| 2011 | 2 | 0 |
| 2012 | 1 | 1 |
| 2013 | 1 | 0 |
| 2014 | 3 | 2 |
| 2015 | 1 | 1 |
| 2016 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures25 Oct 2016US 9,478,497 B2Micron Technology, Inc.
- Nanowire growth on dissimilar material21 Apr 2015US 9,012,887 B2QuNano AB
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures11 Nov 2014US 8,883,644 B2Micron Technology, Inc.
- Methods for fabricating integrated circuits with improved semiconductor fin structures16 Sep 2014US 8,835,328 B2Globalfoundries Inc.
- Method for adjusting feature size and position22 Apr 2014US 8,703,616 B2Round Rock Research, LLC
- Single Spacer Process for Multiplying Pitch by a Factor Greater Than Two and Related Intermediate IC Structures26 Feb 2015US 2015/0054168 A1Micron Technology, Inc.
- Methods for fabricating integrated circuits with improved semiconductor fin structures14 Aug 2014US 2014/0227879 A1Globalfoundries Inc.
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate ic structures6 Feb 2014US 2014/0038416 A1Micron Technology, Inc.
- Nanowire growth on dissimilar material14 Jun 2012US 2012/0145990 A1QuNano AB
- Nanowire growth on dissimilar material7 Oct 2010US 2010/0252808 A1QuNano AB
Most cited
By later US patents
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures742US 7,611,980 B2Micron Technology, Inc. · 2009
- Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition299US 6,063,688 AIntel Corporation · 2000
- Method for pitch reduction215US 6,638,441 B2Macronix International Co., Ltd. · 2003
- Method and apparatus for adjusting feature size and position82US 7,396,781 B2Micron Technology, Inc. · 2008
- Electron beam lithography system and method63US 5,334,282 AHitachi, Ltd. · 1994