Nanowire growth on dissimilar material
AssigneeQuNano AB
InventorsLars Samuelson, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
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Abstract
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
Claims20
A nanostructure device, comprising:
- a plurality of III-V semiconductor nanowires grown on a Si(111) surface of a Si substrate, wherein substantially all of the III-V semiconductor nanowires protrude perpendicular to the Si(111) surface, and wherein each of the plurality of III-V semiconductor nanowires comprises a catalyst on an end of the III-V semiconductor nanowires distal from the Si(111) surface of the Si substrate.
An electronic or optoelectronic device comprising:
- a nanostructured device, the nanostructured device comprising:
- a plurality of III-V semiconductor nanowires grown on a Si(111) surface of a Si substrate, wherein substantially all of the III-V semiconductor nanowires protrude perpendicular to the Si(111) surface, and wherein each of the plurality of III-V semiconductor nanowires comprises a catalyst on an end of the III-V semiconductor nanowires distal from the Si(111) surface of the Si substrate.
A photonic device comprising:
- a nanostructured device, the nanostructured device comprising:
- a plurality of III-V semiconductor nanowires grown on a Si(111) surface of a Si substrate, wherein substantially all of the III-V semiconductor nanowires protrude perpendicular to the Si(111) surface, and wherein each of the plurality of III-V semiconductor nanowires comprises a catalyst on an end of the III-V semiconductor nanowires distal from the Si(111) surface of the Si substrate.
A light emitting diode (LED) device comprising;
- nanostructured device, the nanostructured device comprising:
- a plurality of III-V semiconductor nanowires grown on a Si(111) surface of a Si substrate, wherein substantially all of the III-V semiconductor nanowires protrude perpendicular to the Si(111) surface, wherein each of the plurality of III-V semiconductor nanowires comprises a catalyst on an end of the III-V semiconductor nanowires distal from the Si(111) surface of the Si substrate, wherein each nanowire is a part of a LED structure, and wherein the LED structure comprising a pn unction or a p-i-n junction in order to produce light.
A nanostructured device, comprising:
- a Si substrate having a Si(111) surface;
- at least one of a termination layer and a nucleation layer located on the Si(111) surface, wherein the termination layer comprises a Group III or Group V layer, and the nucleation layer comprises a Group III-V layer having a (111)B orientation;
- and
- a plurality of III-V semiconductor nanowires grown over the Si(111) surface, wherein substantially all of the III-V semiconductor nanowires protrude perpendicular to the Si(111) surface, and wherein each of the plurality of III-V semiconductor nanowires comprises a catalyst on an end of the III-V semiconductor nanowires distal from the Si(111) surface of the Si substrate.
Dependencies are inferred from the claim text.