Nanowire growth on dissimilar material
AssigneeQuNano AB
InventorsLars SAMUELSON, Jonas Ohlsson, Thomas Mårtensson, Patrik Svensson
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Abstract
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
Claims14
A method of growing at least one III-V semiconductor nanowire from a Si surface, the method comprising providing a group III material pre-flow at a predetermined elevated temperature to provide a (111)B-like group III material-terminated Si surface prior to growing of the III-V semiconductor nanowire.
A nanostructured device comprising a plurality of III-V semiconductor nanowires grown on a Si(111) surface of a Si substrate, wherein substantially all III-V semiconductor nanowires protrude perpendicular to the Si(111) surface.
Dependencies are inferred from the claim text.