Y10S 430/151
Matting or other surface reflectivity altering material
Y10S430/151 (Matting or other surface reflectivity altering material) appears on 587 US grants and 125 published applications in this corpus.
Search patents in Y10S- Granted patents
- 587
- Published applications
- 125
- Assignees
- 115
- Inventors
- 932
- Latest grant
- 26 Jun 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 4 | 0 |
| 1980 | 10 | 0 |
| 1981 | 17 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 7 | 0 |
| 1985 | 15 | 0 |
| 1986 | 15 | 0 |
| 1987 | 8 | 0 |
| 1988 | 15 | 0 |
| 1989 | 13 | 0 |
| 1990 | 24 | 0 |
| 1991 | 21 | 0 |
| 1992 | 7 | 0 |
| 1993 | 21 | 0 |
| 1994 | 21 | 0 |
| 1995 | 25 | 0 |
| 1996 | 24 | 0 |
| 1997 | 29 | 0 |
| 1998 | 41 | 0 |
| 1999 | 29 | 0 |
| 2000 | 37 | 0 |
| 2001 | 28 | 6 |
| 2002 | 23 | 21 |
| 2003 | 26 | 25 |
| 2004 | 13 | 18 |
| 2005 | 15 | 12 |
| 2006 | 19 | 17 |
| 2007 | 15 | 13 |
| 2008 | 9 | 4 |
| 2009 | 10 | 6 |
| 2010 | 10 | 3 |
| 2011 | 4 | 0 |
| 2012 | 3 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Photoimageable branched polymer26 Jun 2012US 8,206,893 B2Brewer Science Inc.
- Wet developable bottom antireflective coating composition and method for use thereof19 Jun 2012US 8,202,678 B2International Business Machines Corporation
- Ultra dark polymer10 Apr 2012US 8,153,353 B2Texas Instruments Incorporated
- Photosensitive conductive paste for transferring and photosensitive transfer sheet20 Sep 2011US 8,021,821 B2Noritake Co., Limited
- Composition for forming anti-reflective coat24 May 2011US 7,947,424 B2Nissan Chemical Industries, Ltd.
- Photosensitive paste and process for production of pattern using the same24 Jun 2010US 2010/0159391 A1E. I. Du Pont de Nemours and Company
- Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings18 Feb 2010US 2010/0040988 A1
- Ultra Dark Polymer4 Feb 2010US 2010/0025715 A1Texas Instruments Incorporated
- Photosensitive hardmask for microlithography3 Dec 2009US 2009/0297784 A1Brewer Science Inc.
- Wet developable bottom antireflective coating composition and method for use thereof26 Nov 2009US 2009/0291392 A1International Business Machines Corporation
Most cited
By later US patents
- Semiconductor substrate process using a low temperature deposited carbon-containing hard mask566US 7,323,401 B2APPLIED Materials.Inc. · 2008
- Method utilizing compensation features in semiconductor processing379US 7,202,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2007
- Use of DARC and BARC in flash memory processing198US 6,423,474 B1Micron Technology, Inc. · 2002
- Antireflective silicon-containing compositions as hardmask layer129US 6,420,088 B1International Business Machines Corporation · 2002
- Antireflective SiO-containing compositions for hardmask layer78US 6,730,454 B2International Business Machines Corporation · 2004