Antireflective silicon-containing compositions as hardmask layer
AssigneeInternational Business Machines Corporation
InventorsMarie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee Kwong, Wayne M. Moreau
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Abstract
Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
Claims8
A composition suitable for formation of a spin-on antireflective layer, said composition comprising:
- (a) a polymer containing SiO moieties, a plurality of reactive sites distributed along the polymer for reaction with a crosslinking component, and chromophore moieties,
- (b) a crosslinking component, and
- (c) an acid generator.
Dependencies are inferred from the claim text.