Photosensitive hardmask for microlithography
AssigneeBrewer Science Inc.
InventorsHao Xu, Ramil-Marcelo L. Mercado, Douglas J. Guerrero
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Abstract
New hardmask compositions comprising non-polymeric, metal-containing nanoparticles dispersed or dissolved in a solvent system and methods of using those compositions as hardmask layers in microelectronic structures are provided. The compositions are photosensitive and capable of being rendered developer soluble upon exposure to radiation. The inventive hardmask layer is patterned simultaneously with the photoresist layer and provides plasma etch resistance for subsequent pattern transfer.
Claims26
A method of forming a microelectronic structure, said method comprising:
- (a) providing a substrate having a surface;
- (b) optionally forming one or more intermediate layers on said surface;
- (c) applying a hardmask composition adjacent said intermediate layers, if present, or adjacent said substrate surface if no intermediate layers are present, said hardmask composition comprising a non-polymeric nanoparticle dissolved or dispersed in a solvent system;
- (d) baking said hardmask composition to yield a hardmask layer;
- (e) exposing said hardmask layer to radiation to yield an exposed portion of said hardmask;
- and
- (f) contacting said hardmask layer with a developer so as to remove said exposed portion of said hardmask layer.
A composition useful for forming microelectronic devices, said composition comprising:
- a non-polymeric nanoparticle dissolved or dispersed in a solvent system,
- said composition being developer soluble.
A microelectronic structure comprising:
- a substrate having a surface;
- optionally one or more intermediate layer on said substrate surface;
- and
- a hardmask layer adjacent said intermediate layers, if present, or adjacent said substrate surface if no intermediate layers are present, said hardmask layer comprising a crosslinked non-polymeric nanoparticle and being developer soluble.
Dependencies are inferred from the claim text.