H10W 72/709
Bond pads specially adapted therefor
Official title: {Bond pads specially adapted therefor}
H10W72/709 (Bond pads specially adapted therefor) appears on 12 US grants and 10 published applications in this corpus.
Search patents in H10W- Granted patents
- 12
- Published applications
- 10
- Assignees
- 8
- Inventors
- 40
- Latest grant
- 17 Aug 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 2 |
| 2011 | 1 | 2 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 1 |
| 2015 | 2 | 1 |
| 2016 | 1 | 1 |
| 2017 | 1 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 3 |
| 2021 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Chip package structure17 Aug 2021US 11,094,665 B2
- Chip package structure2 Feb 2021US 10,910,336 B2
- Termination ring with gapped metallic layer27 Oct 2020US 10,814,629 B2Hewlett-Packard Development Company, L. P.
- High density interconnection of microelectronic devices12 Dec 2017US 9,842,832 B2Intel Corporation
- High density interconnection of microelectronic devices19 Jul 2016US 9,397,071 B2Intel Corporation
- Chip package structure1 Oct 2020US 2020/0312807 A1
- Termination ring with gapped metallic layer27 Aug 2020US 2020/0269581 A1Hewlett-Packard Development Company, L. P.
- Chip package structure30 Jul 2020US 2020/0243475 A1
- High density interconnection of microelectronic devices13 Oct 2016US 2016/0300824 A1Intel Corporation
- High density interconnection of microelectronic devices11 Jun 2015US 2015/0163904 A1Intel Corporation
Most cited
By later US patents
- Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off26US 4,827,326 AMotorola, Inc. · 1989
- Semiconductor chip having notches formed in peripheral edges thereof21US 5,341,027 ASamsung Electronics Co., Ltd. · 1994
- Through wafer via and method of making same15US 8,035,198 B2International Business Machines Corporation · 2011
- Semiconductor chip and film and TAB package comprising the chip and film4US 8,575,735 B2Samsung Electronics Co., Ltd. · 2013
- Semiconductor device with surface electrodes3US 8,963,315 B2Denso Corporation · 2015