Integrated circuit having polyimide/metal passivation layer and method of manufacture using metal lift-off
AssigneeMotorola, Inc.
InventorsLeonard F. Altman, Kevin D. Moore, John D. Shurboff
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AssigneeMotorola, Inc.
InventorsLeonard F. Altman, Kevin D. Moore, John D. Shurboff
Estimating the term…
This process uses a metal lift-off step and results in a layer of polyimide covering the surface of an integrated circuit, except at the bonding pads which are covered by metals. A layer of polyimide is applied to the surface of an integrated circuit and then partially cured. A layer of positive photo-resist is applied over the polyimide layer and then pattern exposed and developed, resulting in windows being opened up over the bonding pads of the integrated circuit. The remaining photo-resist is then flood exposed. One or more metals are then sputtered over the resist and the bonding pads. The integrated circuit is then immersed in solvent and the remaining layer of photo-resist, including the metal above it, is lifted-off. Only the metal over the bonding pads remains. The polyimide layer is then fully cured.
A process for passivating an integrated circuit, comprising the steps of:
An integrated circuit manufactured by the process of claim 2.
A process for passivating an integrated circuit, comprising the steps of:
A process for passivating an integrated circuit, comprising the steps of:
Dependencies are inferred from the claim text.