H10W 20/054
By selectively removing parts thereof
Official title: {by selectively removing parts thereof (H10W20/034 takes precedence)}
H10W20/054 (By selectively removing parts thereof) appears on 1,007 US grants and 1,087 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,007
- Published applications
- 1,087
- Assignees
- 190
- Inventors
- 1,965
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 3 | 0 |
| 1996 | 5 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 21 | 0 |
| 2000 | 21 | 0 |
| 2001 | 23 | 16 |
| 2002 | 27 | 23 |
| 2003 | 24 | 25 |
| 2004 | 24 | 36 |
| 2005 | 30 | 48 |
| 2006 | 21 | 42 |
| 2007 | 24 | 35 |
| 2008 | 30 | 45 |
| 2009 | 19 | 22 |
| 2010 | 38 | 17 |
| 2011 | 23 | 14 |
| 2012 | 21 | 25 |
| 2013 | 19 | 25 |
| 2014 | 30 | 24 |
| 2015 | 32 | 42 |
| 2016 | 43 | 51 |
| 2017 | 59 | 56 |
| 2018 | 56 | 62 |
| 2019 | 58 | 72 |
| 2020 | 76 | 73 |
| 2021 | 48 | 55 |
| 2022 | 49 | 62 |
| 2023 | 34 | 83 |
| 2024 | 46 | 56 |
| 2025 | 52 | 41 |
| 2026 | 30 | 37 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Conductive structures and methods of forming the same8 Sep 2026US 12,733,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for etch barrier deposition and devices made according to the same8 Sep 2026US 12,733,467 B2Georgia Tech Research Corporation
- Method of manufacturing semiconductor devices including a cap insulating layer11 Aug 2026US 12,707,905 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming a contact plug with improved contact metal sealing4 Aug 2026US 12,701,977 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Wet recess for Ru subtractive process4 Aug 2026US 12,701,986 B2Samsung Electronics Co., Ltd.
- Conductive structures and methods of forming the same8 Oct 2026US 2026/0314355 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with self-aligned vias27 Aug 2026US 2026/0255940 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Pre-treatment for sam removal improvement with less carbon residue13 Aug 2026US 2026/0234810 A1APPLIED Materials.Inc.
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239942 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect with redeposited metal capping and method forming same13 Aug 2026US 2026/0239943 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Chip interconnect and packaging deposition methods and structures556US 7,147,766 B2ASM Nutool, Inc. · 2006
- Barrier first method for single damascene trench applications546US 7,186,648 B1Novellus Systems, Inc. · 2007
- Method of using a barrier sputter reactor to remove an underlying barrier layer543US 6,498,091 B1APPLIED Materials.Inc. · 2002
- Integration of ALD tantalum nitride for copper metallization495US 7,049,226 B2APPLIED Materials.Inc. · 2006