Wet recess for Ru subtractive process

A semiconductor device, comprising:

• a dielectric layer;
• a plurality of vias in the dielectric layer, the plurality of vias comprising a first via;
• a plurality of metal lines;
• and
• at least one oxide pattern positioned between a bottom surface of a first metal line of the plurality of metal lines and a top surface of the dielectric layer,
• wherein the first metal line comprises at least one first recess positioned between the bottom surface of the first metal line and the dielectric layer,
• wherein a second metal line of the plurality of metal lines comprises a second recess at a bottom surface of the second metal line such that a first section of the second metal line directly contacts the first via and a second section of the second metal line defined by the second recess does not directly contact the first via or the dielectric layer having the first via therein,
• wherein the at least one first recess is defined by the bottom surface of the first metal line, a side surface of the at least one oxide pattern, and the top surface of the dielectric layer, and
• wherein the second metal line is free of overlap with the at least one oxide pattern in a direction that is perpendicular to the top surface of the dielectric layer.

A method of fabricating a semiconductor device, comprising:

• providing a base structure comprising a dielectric layer and a plurality of vias formed in the dielectric layer;
• depositing an adhesion layer on a top surface of the dielectric layer;
• patterning a plurality of metal lines on the base structure;
• and
• forming at least one first recess at a bottom surface of a first metal line of the plurality of metal lines such that a first section of the first metal line directly contacts a first via of the plurality of vias and a second section of the first metal line defined by the at least one first recess does not directly contact the first via or the dielectric layer in which the first via is formed and/or between a bottom surface of a second metal line of the plurality of metal lines and the dielectric layer,
• wherein the at least one first recess between the bottom surface of the second metal line and the dielectric layer is defined by the bottom surface of the second metal line, a bottom surface of the adhesion layer, and a top surface of the dielectric layer, and
• wherein the first metal line is free of overlap with the adhesion layer in a direction that is perpendicular to the top surface of the dielectric layer.