Methods for etch barrier deposition and devices made according to the same

A method for etch barrier deposition comprising:

• depositing a seed layer onto a substrate, the seed layer comprising an active material and the substrate comprising a dielectric material;
• depositing an active layer onto the seed layer, the active layer being deposited in a predetermined pattern onto the seed layer;
• coating the active layer with a barrier layer comprising an inorganic barrier material such that the barrier layer conforms to the predetermined pattern of the active layer;
• directionally etching the barrier layer from a direction orthogonal to the substrate such that at least a portion of the seed layer and the active layer are exposed, wherein at least a portion of the barrier layer oriented parallel to the direction of the directional etching remains coated on the active layer;
• etching the portion of the seed layer to remove the seed layer from the substrate, the etching performed with an etching material that has a low reactivity with the barrier layer such that the portion of the barrier layer remains coated on the active layer;
• and
• etching the barrier layer remaining coated on the active layer with a material that has a low reactivity with the active material such that the active material in the predetermined pattern remains on the substrate.

A method comprising:

• forming fine line redistribution layers (RDLs) having a width less than 5 microns on a panel-based organic package substrate comprising:
• depositing a seed layer onto the substrate, the seed layer comprising an active material and the substrate comprising a dielectric material;
• depositing a photoresist material onto the seed layer, the deposition including photoresist application, photolithography, and photoresist development;
• electro-depositing the active material into a predetermined pattern of the RDLs determined by the photoresist material;
• stripping the photoresist material such that the active material remains on the active layer in the predetermined pattern;
• coating the active layer with a barrier layer comprising an inorganic barrier material such that the barrier layer conforms to the predetermined pattern of the active layer;
• directionally etching the barrier layer from a direction orthogonal to the substrate such that at least a portion of the seed layer and the active layer are exposed, wherein at least a portion of the barrier layer oriented parallel to the direction of the directional etching remains coated on the active layer;
• and
• etching the portion of the seed layer to remove the seed layer from the substrate, the etching performed with an etching material that has a low reactivity with the barrier layer such that the portion of the barrier layer remains coated on the active layer.