H10W 10/0142
The dielectric materials being chemical transformed from non-dielectric materials
Official title: {the dielectric materials being chemical transformed from non-dielectric materials}
H10W10/0142 (The dielectric materials being chemical transformed from non-dielectric materials) appears on 165 US grants and 125 published applications in this corpus.
Search patents in H10W- Granted patents
- 165
- Published applications
- 125
- Assignees
- 69
- Inventors
- 313
- Latest grant
- 17 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 3 | 0 |
| 1995 | 9 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 1 |
| 2002 | 3 | 3 |
| 2003 | 2 | 2 |
| 2004 | 4 | 4 |
| 2005 | 2 | 10 |
| 2006 | 6 | 9 |
| 2007 | 7 | 4 |
| 2008 | 4 | 4 |
| 2009 | 3 | 2 |
| 2010 | 3 | 0 |
| 2011 | 2 | 1 |
| 2012 | 2 | 7 |
| 2013 | 2 | 2 |
| 2014 | 7 | 2 |
| 2015 | 0 | 3 |
| 2016 | 3 | 3 |
| 2017 | 5 | 5 |
| 2018 | 4 | 7 |
| 2019 | 4 | 6 |
| 2020 | 11 | 13 |
| 2021 | 5 | 9 |
| 2022 | 9 | 10 |
| 2023 | 5 | 8 |
| 2024 | 8 | 4 |
| 2025 | 3 | 5 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Convex shape trench in RDL for stress relaxation17 Feb 2026US 12,557,306 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate processing method10 Feb 2026US 12,550,638 B2ASM IP Holding B. V.
- Method of fabricating integrated circuits with fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material23 Sep 2025US 12,426,316 B2Intel Corporation
- Method of manufacturing semiconductor devices and semiconductor devices24 Jun 2025US 12,341,055 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture1 Apr 2025US 12,266,728 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Profile control for stress relaxation4 Jun 2026US 2026/0156844 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Depositing and oxidizing silicon liner for forming isolation regions23 Oct 2025US 2025/0329576 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor devices and semiconductor devices25 Sep 2025US 2025/0300005 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material29 May 2025US 2025/0176225 A2Intel Corporation
- Shallow Trench Isolation using Porous Semiconductor20 Feb 2025US 2025/0062157 A1Murata Manufacturing Co., Ltd.
Most cited
By later US patents
- Trench-filling method and film-forming system489US 8,722,510 B2Tokyo Electron Limited · 2014
- Methods of forming a phosphorous doped silicon dioxide comprising layer132US 7,125,815 B2Micron Technology, Inc. · 2006
- Planarized deep-shallow trench isolation for CMOS/bipolar devices123US 6,137,152 ATexas Instruments - Acer Incorporated · 2000
- Process for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layer104US 5,087,586 AMicron Technology, Inc. · 1992
- Method for forming planarized shallow trench isolation in an integrated circuit and a structure formed thereby96US 5,130,268 ASGS-Thomson Microelectronics S.A. · 1992