Substrate processing method
AssigneeASM IP Holding B.V.
InventorsSungHa Choi, HongSuk Kim, KiHun Kim, SangHeon Yong, JuHyuk Park
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Abstract
A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.
Claims19
A method of processing a substrate having a gap, the method comprising:
- loading the substrate onto a substrate support unit;
- supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit disposed opposite to the substrate support unit;
- and
- generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit,
- wherein a plurality of sub-steps is performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating the direct plasma, and
- different plasma duty ratios are applied during the plurality of sub-steps.
A method of processing a substrate having a surface in which a gap is formed, the method comprising:
- loading the substrate to a reaction space;
- partially filling the gap by using a direct plasma method, by maintaining the reaction space at a first temperature of less than 100° C. and a first pressure, supplying an oligomeric silicon precursor at a first flow rate in a state in which RF power of a first voltage is applied for a first time, and supplying a nitrogen-containing gas of a second flow rate;
- additionally filling the gap by using the direct plasma method, by maintaining the reaction space at the first temperature and the first pressure, supplying the oligomeric silicon precursor at the first flow rate in a state in which the RF power of the first voltage is applied for a second time less than the first time, and supplying the nitrogen-containing gas of the second flow rate;
- converting, by using a remote plasma method, a flowable silicon nitride film formed in the gap of the substrate by partially filling the gap and additionally filling the gap into a silicon oxide film;
- and
- densifying the silicon oxide film under an oxygen atmosphere.
Dependencies are inferred from the claim text.