Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Yu-Cheng Shiau, Chunyao Wang, Chih-Tang Peng, Yung-Cheng Lu, Chi On Chui
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Abstract
A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.
Claims20
A semiconductor device comprising:
- a first liner extending between a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
- a second liner in physical contact with the first liner;
- a third liner in physical contact with the second liner, the third liner comprising nitrogen at a percentage of less than about 10%;
- a fourth liner in physical contact with the third liner;
- a capping layer in physical contact with the fourth liner, the capping layer comprising carbon at a percentage of less than about 10%;
- a dielectric cap in physical contact with the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap;
- and
- a dielectric fin embedded within the dielectric cap and extending further away from the semiconductor substrate than the dielectric cap.
A semiconductor device comprising:
- a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
- a first liner adjacent to both the first semiconductor fin and the second semiconductor fin;
- a second liner over the first liner;
- a third liner over the second liner, the third liner comprising nitrogen at a percentage of less than about 10%;
- a fourth liner over the third liner;
- a capping layer over the fourth liner, the capping layer comprising carbon at a percentage of less than about 10%;
- and
- a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.
A semiconductor device comprising:
- a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
- at least four liners between the first semiconductor fin and the second semiconductor fin, wherein a first one of the at least four liners comprises nitrogen at a percentage of less than about 10% and wherein a second one of the at least four liners comprises nitrogen at a percentage of less than about 10%, the first one and the second one of the at least four liners being separated by a third one of the at least four liners;
- a capping layer over the at least four liners, the capping layer comprising carbon at a percentage of less than about 10%;
- and
- a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.
Dependencies are inferred from the claim text.