H10P 90/1916
With separation or delamination along an ion implanted layer
Official title: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
H10P90/1916 (With separation or delamination along an ion implanted layer) appears on 2,076 US grants and 2,471 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,076
- Published applications
- 2,471
- Assignees
- 346
- Inventors
- 2,056
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 11 | 0 |
| 2000 | 20 | 0 |
| 2001 | 36 | 12 |
| 2002 | 42 | 41 |
| 2003 | 47 | 51 |
| 2004 | 36 | 119 |
| 2005 | 56 | 126 |
| 2006 | 78 | 149 |
| 2007 | 91 | 121 |
| 2008 | 86 | 144 |
| 2009 | 96 | 171 |
| 2010 | 134 | 172 |
| 2011 | 142 | 160 |
| 2012 | 150 | 124 |
| 2013 | 134 | 82 |
| 2014 | 107 | 77 |
| 2015 | 100 | 80 |
| 2016 | 59 | 66 |
| 2017 | 81 | 83 |
| 2018 | 62 | 87 |
| 2019 | 74 | 84 |
| 2020 | 67 | 72 |
| 2021 | 78 | 114 |
| 2022 | 78 | 78 |
| 2023 | 62 | 81 |
| 2024 | 61 | 73 |
| 2025 | 48 | 57 |
| 2026 | 33 | 47 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Laser recovery of a core layer of a temporary carrier structure29 Sep 2026US 12,751,028 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Composite substrate, manufacturing method thereof and semiconductor device22 Sep 2026US 12,745,456 B2Enkris Semiconductor (Wuxi), Ltd.
- Donor substrate for the transfer of a thin layer and associated transfer method1 Sep 2026US 12,727,448 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for manufacturing a structure comprising a plurality of membranes overhanging cavities25 Aug 2026US 12,715,764 B2Commissariat A L'energie Atomique Et Aux Energies
- Method for manufacturing SOI wafer and SOI wafer11 Aug 2026US 12,707,944 B2Shin-Etsu Handotai Co., Ltd.
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Process for double layer transfer8 Oct 2026US 2026/0314346 A1
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof1 Oct 2026US 2026/0305272 A1
- Method for making radio frequency silicon-on-insulator (rfsoi) structure including a superlattice24 Sep 2026US 2026/0293623 A1Atomera Incorporated
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method924US 6,372,608 B1Seiko Epson Corporation · 2002
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same714US 6,645,830 B2Seiko Epson Corporation · 2003
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same674US 6,818,530 B2Seiko Epson Corporation · 2004
- Method for the transfer of thin layers of monocrystalline material to a desirable substrate617US 5,877,070 AMax Planck Society · 1999