H10P 90/15
By making porous regions on the surface
Official title: {by making porous regions on the surface}
H10P90/15 (By making porous regions on the surface) appears on 61 US grants and 55 published applications in this corpus.
Search patents in H10P- Granted patents
- 61
- Published applications
- 55
- Assignees
- 39
- Inventors
- 132
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 7 | 1 |
| 2002 | 3 | 0 |
| 2003 | 2 | 2 |
| 2004 | 2 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 3 |
| 2008 | 1 | 2 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 2 | 1 |
| 2012 | 0 | 1 |
| 2013 | 1 | 3 |
| 2014 | 0 | 1 |
| 2015 | 4 | 2 |
| 2016 | 3 | 3 |
| 2017 | 2 | 3 |
| 2018 | 1 | 9 |
| 2019 | 2 | 1 |
| 2020 | 7 | 7 |
| 2021 | 1 | 0 |
| 2022 | 5 | 2 |
| 2023 | 2 | 4 |
| 2024 | 1 | 2 |
| 2025 | 2 | 1 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for detecting analytes9 Jun 2026US 12,650,407 B2Monash University
- Device over patterned buried porous layer of semiconductor material14 Apr 2026US 12,604,493 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device9 Sep 2025US 12,412,740 B2Infineon Technologies AG
- Manufacturing and reuse of semiconductor substrates11 Mar 2025US 12,249,504 B2Infineon Technologies AG
- Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device23 Jan 2024US 11,881,397 B2Infineon Technologies AG
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- Systems and methods for porous backside contacts16 Jul 2026US 2026/0206313 A1IQE plc
- Method for Micro-Patterning Silicon Carbide Seed Wafer for Crystal Growth14 May 2026US 2026/0136898 A1LEAP Semiconductor Corp.
- Systems and methods for porous wall coatings12 Mar 2026US 2026/0075939 A1IQE plc
- Systems and methods for stress reduction in porous layers12 Mar 2026US 2026/0076113 A1IQE plc
Most cited
By later US patents
- Method of producing semiconductor substrate309US 5,250,460 ACanon Kabushiki Kaisha · 1993
- Method for preparing semiconductor member309US 5,374,581 ACanon Kabushiki Kaisha · 1994
- SOI substrate processing method197US 6,200,878 B1Canon Kabushiki Kaisha · 2001
- Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus120US 6,664,169 B1Canon Kabushiki Kaisha · 2003
- Porous semiconductor handle substrate108US 10,784,348 B2QUALCOMM Incorporated · 2020