Device over patterned buried porous layer of semiconductor material
AssigneeGlobalFoundries U.S. Inc.
InventorsMark D. Levy, Qizhi Liu, Jeonghyun Hwang
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a patterned buried porous layer of semiconductor material and a device over the patterned buried porous layer, and methods of manufacture. The structure includes: a semiconductor substrate includes a patterned buried porous layer within the semiconductor substrate; a semiconductor compound material over the semiconductor substrate and the patterned buried porous layer; and at least one device on the semiconductor compound material. The non-patterned portions of the semiconductor substrate provide a thermal pathway within the semiconductor substrate.
Claims17
A structure comprising:
- a semiconductor substrate comprising a patterned buried porous layer within the semiconductor substrate;
- a semiconductor compound material over the semiconductor substrate and the patterned buried porous layer;
- and
- at least one device on the semiconductor compound material,
- wherein non-patterned portions of the semiconductor substrate provide a thermal pathway within the semiconductor substrate,
- wherein the at least one device comprises one or more devices partially extending over openings within the patterned buried porous layer.
A structure comprising:
- a semiconductor substrate comprising a patterned buried porous layer within the semiconductor substrate;
- a semiconductor compound material over the semiconductor substrate and the patterned buried porous layer;
- and
- at least one device on the semiconductor compound material,
- wherein non-patterned portions of the semiconductor substrate provide a thermal pathway within the semiconductor substrate and the at least one device comprises one or more devices offset from openings within the patterned buried porous layer.
A method comprising:
- forming a patterned buried porous layer within a semiconductor substrate;
- forming a semiconductor compound material over the semiconductor substrate and the patterned buried porous layer;
- and
- forming at least one device on the semiconductor compound material,
- wherein the non-patterned buried porous layer provides a thermal pathway within the semiconductor substrate and the at least one device comprises one or more devices partially extending over openings within the patterned buried porous layer.
Dependencies are inferred from the claim text.