Method for preparing semiconductor member
AssigneeCanon Kabushiki Kaisha
InventorsTakeshi Ichikawa, Takao Yonehara, Kiyofumi Sakaguchi
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Abstract
A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.
Claims11
A method for preparing a semiconductor member, characterized by including the steps of:
- making a silicon substrate porous;
- forming a non-porous silicon monocrystalline layer on said porous silicon substrate at a first temperature;
- bonding a surface of said non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof;
- etching the porous silicon by removing said porous silicon of said bonded substrate by chemical etching;
- and
- forming a monocrystalline silicon layer on said non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than said first temperature.
Dependencies are inferred from the claim text.