Method for Micro-Patterning Silicon Carbide Seed Wafer for Crystal Growth

A method for micro-patterning a surface of a silicon carbide seed wafer by undergoing a chemical etching process, comprising:

• providing a silicon carbide seed wafer;
• preparing an alkaline aqueous solution containing hydroxide ions into an nebulizer;
• introducing a prepared alkaline aqueous solution containing hydroxide ions to generate a fine mist of said alkaline aqueous solution containing hydroxide ions at a room temperature;
• exposing said silicon carbide seed wafer to said fine mist of said alkaline aqueous solution containing hydroxide ions;
• allowing said fine mist of said alkaline aqueous solution containing hydroxide ions to condense onto a surface of silicon carbide seed wafer to form a plurality of droplets through a self-assembly process;
• subjecting said silicon carbide seed wafer with a condensed plurality of droplets to a thermal treatment at a temperature between 400° C. to 550° C. for a controlled duration for 1 minute to 20 minutes, thereby inducing chemical etching;
• and
• rinsing said silicon carbide seed wafer with deionized water, removing a plurality of residual droplets and leaving a plurality of orderly arranged etch pits on said silicon carbide seed wafer, said orderly arranged etch pits forming an orderly micro-patterned structure on said silicon carbide seed wafer.