Systems and methods for stress reduction in porous layers
AssigneeIQE plc
InventorRichard HAMMOND
Life of this patent
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Abstract
A layered structure can include a porous layer over a substrate and a thermal layer coupled to pore walls of the porous layer. The porous layer can have a higher resistivity than the substrate. A stress of the porous layer can be proportional to a variance of infrared (IR) transmission data of the porous layer. The variance of IR transmission data can be no greater than 2,500. Advantageously the thermal layer can decrease stress in the porous layer, increase thermal stability of the porous layer, decrease cracking and flaking during high temperature processing, maintain high resistivity of the porous layer, and increase the quality of the epitaxial layer and/or semiconductor devices formed using the porous layer.
Claims18
A layered structure comprising:
- a porous layer over a substrate, the porous layer having a higher resistivity than the substrate, a variance of infrared (IR) transmission data of the porous layer being no greater than 2,500;
- and
- a thermal oxide layer coupled to pore walls of the porous layer.
A method of manufacturing a layered structure, the method comprising:
- forming a porous layer over a substrate;
- and
- heating the porous layer in an oxidizing environment to form a thermal oxide layer coupled to pore walls of the porous layer,
- wherein a ratio (° C./hr) of a heating temperature and a heating time of the porous layer is between a range of 10° C./hr to 500° C./hr.
Dependencies are inferred from the claim text.