Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus

A process for producing a semiconductor member making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate;
• (2) forming a semiconductor layer at least on the surface of the porous layer;
• (3) bonding a second substrate to the semiconductor layer;
• (4) removing the semiconductor layer at its region not covered with the second substrate;
• (5) separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate;
• and
• (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate;
• (2) forming a semiconductor layer at least on the surface of the porous layer;
• (3) removing the semiconductor layer at its peripheral region;
• (4) bonding a second substrate to the surface of the semiconductor layer;
• (5) separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate;
• and
• (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate;
• (2) forming a semiconductor layer at least on the surface of the porous layer;
• (3) bonding a second substrate to the semiconductor layer;
• (4) removing the semiconductor layer at its region not covered with the second substrate;
• (5) separating the semiconductor layer from the first substrate at the part of the porous layer by applying an external force to at least one of the first substrate, the porous layer and the second substrate;
• and
• (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

A process for producing a semiconductor member making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer;
• (2) forming a semiconductor layer on the surface of the porous layer;
• (3) removing the semiconductor layer at its part on the periphery of the first substrate by electropolishing;
• (4) bonding a second substrate to the surface of the semiconductor layer;
• (5) separating the semiconductor layer from the first substrate at the part of the porous layer to transfer the semiconductor layer to the second substrate;
• and
• (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer;
• (2) forming a semiconductor layer on the surface of the porous layer;
• (3) removing the semiconductor layer and the porous layer at their part on the periphery of the first substrate by electropolishing;
• (4) forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate;
• (5) bonding a second substrate to the surface of the semiconductor layer;
• (6) separating the semiconductor layer from the first substrate at the part of the porous layer to transfer the semiconductor layer to the second substrate;
• and
• (7) treating the surface of the first substrate after separation and repeating the above steps (1) to (6).

A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer;
• (2) forming a semiconductor layer on the surface of the porous layer;
• (3) removing the semiconductor layer and the porous layer at their part on the periphery of the first substrate by electropolishing;
• (4) forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate;
• (5) bonding a second substrate to the surface of the semiconductor layer;
• (6) separating the semiconductor layer from the first substrate at the part of the porous laye to transfer the semiconductor layer to the second substrate;
• and
• (7) treating the surface of the first substrate after separation and repeating the above steps (1) to (6),
• wherein the step of removing the semiconductor layer and porous layer at their part on the periphery of the first substrate and the step of forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate are carried out simultaneously.

A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer;
• (2) forming a semiconductor layer on the surface of the porous layer;
• (3) removing the semiconductor layer and the porous layer at their part on the periphery of the first substrate by electropolishing;
• (4) forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate;
• (5) bonding a second substrate to the surface of the semiconductor layer;
• (6) separating the semiconductor layer from the first substrate at the part of the porous layer to transfer the semiconductor layer to the second substrate;
• and
• (7) treating the surface of the first substrate after separation and repeating the above steps (1) to (6),
• wherein the step of removing the semiconductor layer and porous layer at their part on the periphery of the first substrate and the step of forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate are carried in the same anodizing bath.

A process for producing a solar cell making use of a thin-film crystal semiconductor layer, the process comprising the steps of:

• (1) anodizing the surface of a first substrate at least on its principal-surface side to form a porous layer;
• (2) forming a semiconductor layer on the surface of the porous layer;
• (3) removing the semiconductor layer and the porous layer at their part on the periphery of the first substrate by electropolishing;
• (4) forming a surface anti-reflection layer on the surface of the semiconductor layer at its part other than that on the periphery of the first substrate;
• (5) bonding a second substrate to the surface of the semiconductor layer;
• (6) separating the semiconductor layer from the first substrate at the part of the porous layer to transfer the semiconductor layer to the second substrate;
• and
• (7) treating the surface of the first substrate after separation and repeating the above steps (1) to (6),
• wherein the second substrate comprises a flexible film, and force that acts in the direction where the film is separated from the first substrate is applied to the film to separate the semiconductor layer at the part of the porous layer.